Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-03-23
2000-09-26
Elms, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438159, 438160, H01L 2100
Patent
active
061241555
ABSTRACT:
A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed into polysilicon TFTs.
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Kusumoto Naoto
Zhang Hongyong
Costellia Jeffrey L.
Elms Richard
Lebentritt Michael S.
Semiconductor Energy Laboratory Co,. Ltd.
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