Semiconductor device having film for controlling diffusion of im

Details Semiconductor device having film for controlling diffusion of im Semiconductor device having film for controlling diffusion of im

1991-06-24

1993-11-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257369, 257408, 257653, H01L 2701, H01L 2910, H01L 2702, H01L 2906

Patent

active

052668231

ABSTRACT:
According to this present invention, a semiconductor device includes source and drain diffusion layers, and a gate electrode formed on a substrate between the source diffusion layer and the drain diffusion layer. In addition, antioxidant films are respectively formed on the source diffusion layer and the drain diffusion layer. These antioxidant films are used for controlling a diffusion rate of an impurity contained in the source diffusion layer and the drain diffusion layer.

REFERENCES:
patent: 4623912 (1986-11-01), Chang et al.
patent: 4937645 (1990-06-01), Ootsuka et al.

Affiliated with

Also associated with

Rating

Semiconductor device having film for controlling diffusion of im does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having film for controlling diffusion of im, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having film for controlling diffusion of im will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2098834