Chip decoupling capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257379, 257532, 257596, H01L 2702

Patent

active

052668215

ABSTRACT:
An extensive network of N-channel transistor formed capacitor, with one node tie directly to V.sub.cc power bus and the other node directly V.sub.ss power bus, is implemented throughout all open space available on the whole silicon chip (memory as well as logic chip), particularly those directly underneath the metal power bus to achieve an on-chip power bus decoupling capacitor with capacitance in excess of 0.001 .mu.F.

REFERENCES:
patent: 4164751 (1979-08-01), Tasch, Jr.
patent: 4427989 (1984-01-01), Anantha et al.
patent: 4477736 (1984-10-01), Onishi
patent: 4604639 (1986-08-01), Kinoshita
patent: 4691304 (1987-09-01), Hori et al.
patent: 4737830 (1988-04-01), Patel et al.
patent: 4780846 (1988-10-01), Tanabe et al.
patent: 4835416 (1989-05-01), Miller

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