MOS memory device having a LDD structure and a visor-like insula

Details MOS memory device having a LDD structure and a visor-like insula MOS memory device having a LDD structure and a visor-like insula

1991-01-04

1992-12-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365185, 257324, 257344, 257411, H01L 2978

Patent

active

051722003

ABSTRACT:
A non-volatile semiconductor memory device includes a memory transistor of a dual gate structure in a memory cell adapted for storing memory information. The transistor includes a floating gate and a control gate insulated by an interlayer insulating layer having a laminated structure of silicon oxide and silicon nitride films. The nitride film of the interlayer insulating layer has a visor-like portion protruding from and overlying a portion of the lateral surface of the floating gate. The transistor further is comprised of impurity regions in a so-called LDD structure.

REFERENCES:
patent: 4376947 (1983-03-01), Chiu et al.
patent: 4573144 (1986-02-01), Countryman, Jr.
patent: 4835740 (1989-05-01), Sato
patent: 4939558 (1990-07-01), Smayling et al.
patent: 4939690 (1990-07-01), Momodomi et al.
patent: 4964143 (1990-10-01), Haskell

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