Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1989-11-21

1992-12-15

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, H01L 2968, H01L 2702, H01L 2934

Patent

active

051721961

ABSTRACT:
A nonvolatile semiconductor memory device has n.sup.+ -type source and drain regions formed in the surface of a p-type semiconductor substrate, a floating gate formed above and insulated from a channel region provided between the source and drain regions, and a control gate formed above and insulated from the floating gate. The memory device further has a capacitor provided between the control gate and drain region.

REFERENCES:
patent: 4274012 (1981-06-01), Simko
patent: 4282446 (1981-08-01), McElroy
patent: 4314265 (1982-02-01), Simko
patent: 4328565 (1982-05-01), Harari
patent: 4437174 (1984-03-01), Masuoka
patent: 4527258 (1985-07-01), Guterman
patent: 4558339 (1985-12-01), Angle
patent: 4577215 (1986-03-01), Stewart et al.
patent: 4608591 (1986-08-01), Ipri et al.
patent: 4616245 (1986-10-01), Vopech et al.
patent: 4652897 (1987-03-01), Okuyama et al.
patent: 4654825 (1987-03-01), Rinerson
patent: 4663645 (1987-05-01), Kamori et al.
patent: 4686558 (1987-08-01), Adam

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2097540