Post etching treatment of semiconductor devices

Details Post etching treatment of semiconductor devices Post etching treatment of semiconductor devices

1992-12-23

1994-04-12

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 156666, 156665, 156643, 156646, H01L 2100

Patent

active

053022416

ABSTRACT:
According to the process of this invention, after the etching of a semiconductor device in an etching area is completed a reactive chemical composition is typically formed on the semiconductor device. Prior to removing the etched semiconductor from the etching area, a passivating agent comprising silicon tetrafluoride is introduced into the etching area. The passivating agent reacts with any reactive chemical compound associated with the semiconductor to inhibit corrosion of the semiconductor device. The inhibited reactive chemical composition, which is typically in the gas phase, is then pumpable out of the etch area. The inhibited reactive chemical composition is substantially unreactive with and does not post-etch the semiconductor device as is the case with the reactive chemical composition per se. Furthermore, the parametric properties and the threshold voltage which were altered by the prior art dry etch process are not changed by the use of the subject post etching process.

REFERENCES:
patent: 4325984 (1982-04-01), Galfo et al.
patent: 4505782 (1985-03-01), Jacob et al.
patent: 4581101 (1986-04-01), Lenoue et al.
patent: 4592800 (1986-06-01), Landau et al.
patent: 4734157 (1988-03-01), Carbaugh et al.
patent: 4985113 (1991-01-01), Fujimoto et al.

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