Short channel fermi-threshold field effect transistors including

Details Short channel fermi-threshold field effect transistors including Short channel fermi-threshold field effect transistors including

1996-02-07

1997-12-16

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257297, 257346, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056988842

ABSTRACT:
A Fermi-FET includes a drain field termination region between the source and drain regions, to reduce and preferably prevent injection of carriers from the source region into the channel as a result of drain bias. The drain field terminating region prevents excessive drain induced barrier lowering while still allowing low vertical field in the channel. The drain field terminating region is preferably embodied by a buried counterdoped layer between the source and drain regions, extending beneath the substrate surface from the source region to the drain region. The buried counterdoped layer may be formed using a three tub structure which produces three layers between the spaced apart source and drain regions. The drain field terminating region may also be used in a conventional MOSFET. The channel region is preferably formed by epitaxial deposition, so that the channel region need not be counterdoped relative to the drain field terminating region. Higher carrier mobility in the channel may thereby be obtained for a given doping level.

REFERENCES:
patent: 4984043 (1991-01-01), Vinal
patent: 4990974 (1991-02-01), Vinal
patent: 5194923 (1993-03-01), Vinal
patent: 5369295 (1994-11-01), Vinal
patent: 5374836 (1994-12-01), Vinal
patent: 5384476 (1995-01-01), Nishizawa et al.
patent: 5583361 (1996-12-01), Morishita
Oka et al., "Two-Dimensional Analysis of Normally-Off Type Buried Channel MOSFETs", IEDM 25, Washington, DC, Dec. 3-5, 1979, pp. 30-33.
Lee et al., "Room Temperature 0.1 .mu.m CMOS Technology with 11.8 ps Gate Delay", IEDM, 1993, pp.131-134.
Yan et al., "Scaling the Si MOSFET: From Bulk to SOI to Bulk", IEEE Transactions on Electron Devices, vol. 39, No. 7, Jul. 1992, pp. 1704-1710.
Cham et al., "Device Design for the Submicrometer p-Channel FET with n.sup.+ Polysilicon Gate", IEEE, 1984, pp. 964-965.

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