Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1995-08-18

1997-12-16

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257319, 257320, 257324, 257326, 257390, 257401, H01L 29788

Patent

active

056988796

ABSTRACT:
A nonvolatile semiconductor memory device has reduced parasitic capacitance at a select transistor obtained by providing a depletion-mode select transistor with a charge accumulation layer, virtually making a gate insulating film thicker, or providing under the gate insulating film a channel layer that is of a same conductivity type as that of a source and drain regions and connects thereto, thereby enabling the potential of the select gate to be almost fixed at a desired value, preventing a faulty operation and making it possible to cause the select transistor to operate at high speed.

REFERENCES:
patent: 4816883 (1989-03-01), Baldi
A High Density EPROM Cell and Array, R. Stewart, et al., May 28-30, 1986, Symposium on VLSI Technology, pp. 89-90.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-209533