Method of making macrocrystalline or single crystal semiconducto

Details Method of making macrocrystalline or single crystal semiconducto Method of making macrocrystalline or single crystal semiconducto

1983-02-10

1986-06-24

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG88, 156624, C30B 2520

Patent

active

045966265

ABSTRACT:
A macrocrystalline or single crystal semiconductive material is formed from a primary substrate including a single crystal or several very large crystals of a relatively low-melting material. This primary substrate is deposited on a base such as steel or ceramic, and it may be formed from such metals as zinc, cadmium, germanium, aluminum, tin, lead, copper, brass, magnesium silicide, or magnesium stannide. These materials generally have a melting point below about 1000.degree. C. and form on the base crystals the size of fingernails or greater. The primary substrate has an epitaxial relationship with a subsequently applied layer of material, and because of this epitaxial relationship, the material deposited on the primary substrate will have essentially the same crystal size as the crystals in the primary substrate. If required, successive layers are formed, each of a material which has an epitaxial relationship with the previously deposited layer, until a layer is formed which has an epitaxial relationship with the semiconductive material. This layer is referred to as the epitaxial substrate, and its crystals serve as sites for the growth of large crystals of semiconductive material. The primary substrate is passivated to remove or otherwise convert it into a stable or nonreactive state prior to deposition of the semiconductive material.

REFERENCES:
patent: 3368125 (1968-02-01), Pasierb
patent: 3370980 (1968-02-01), Anderson
patent: 3959045 (1976-05-01), Antypas
patent: 3963538 (1976-06-01), Broadie et al.
patent: 4116751 (1978-09-01), Zaromb
patent: 4378259 (1983-03-01), Hasegawa
Hovel et al, IBM Technical Disclosure Bulletin, 7/75, pp. 544-555.

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