Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1999-03-23
2000-11-14
Mai, Son
Static information storage and retrieval
Read/write circuit
Differential sensing
365205, 36523006, G11C 702
Patent
active
061479195
ABSTRACT:
A semiconductor memory has memory cells arranged in arrays, direct-type sense amplifiers arranged in each column of the memory cells, for writing and reading data to and from a memory cell to be accessed, column selection lines for selecting sense amplifiers that are in a column that involves the memory cell to be accessed, write-only column selection lines for selecting sense amplifiers that are in a row that involves the memory cell to be accessed if the memory cell is accessed to write data thereto, and local drivers. The sense amplifiers are grouped, in each row, into sense amplifier blocks. The write-only column selection lines consist of first selection lines for selecting sense amplifier blocks that are in the row that involves the memory cell to be accessed for data write and second selection lines for selecting sense amplifiers that are contained in the selected sense amplifier blocks. The local drivers apply a selection signal to the second selection lines according to a selection signal from the first selection lines. The write-only column selection lines are controlled by signals that are used to control the sense amplifiers.
REFERENCES:
patent: 5933380 (1999-08-01), Tsuchida et al.
patent: 5953261 (1999-09-01), Furutani et al.
Eto Satoshi
Hasegawa Masatomo
Ishii Yuki
Kanou Hideki
Kawabata Kuninori
Fujitsu Limited
Mai Son
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