Process for etching SiO.sub.2 layers to silicon in a moderate va

Details Process for etching SiO.sub.2 layers to silicon in a moderate va Process for etching SiO.sub.2 layers to silicon in a moderate va

1977-12-19

1979-12-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 204192E, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

041804325

ABSTRACT:
Silicon dioxide is etched at about five times the rate of silicon in a moderate vacuum gas plasma formed from a mixture of CF.sub.4 and oxygen wherein the mixture contains above about 5 to about 15 percent by volume CF.sub.4 so that films of silicon dioxide on silicon can be etched to the silicon surface without excessive attack on the silicon. Silicon dioxide is etched at about three times the rate of silicon nitride so that silicon nitride can be used as an etch mask for the process.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3795557 (1974-03-01), Jacob
patent: 3880684 (1975-04-01), Abe
patent: 4025411 (1977-05-01), Hom-Ma et al.
patent: 4092210 (1978-05-01), Hoepfner
patent: 4092442 (1978-05-01), Agnihotri et al.

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