Method of reducing loss of metal silicide in pre-metal etching

Details Method of reducing loss of metal silicide in pre-metal etching Method of reducing loss of metal silicide in pre-metal etching

1996-07-12

1999-10-19

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438649, 438651, 438655, 438721, H01L 2144

Patent

active

059703792

ABSTRACT:
A method of reducing the loss of metal silicide in pre-metal etching which includes the following steps. A polysilicon gate electrode and implanted source/drain electrodes are formed on a silicon substrate. A metal silicide layer is formed on the polysilicon gate electrode and the source/drain electrodes. On the surface of the substrate, the polysilicon gate electrode, the source-drain electrodes region and the metal silicide layer, a protecting glass for insulation is formed and then dry etched to form a contact window. The metal silicide layer will form a damaged metal silicide layer in the contact window. Thereafter, a thermal process is conducted to repair the damaged metal silicide layer and finally, pre-metal etching is conducted completing the process. Pursuant to this method, the extremely low resistance of the metal silicide remains.

REFERENCES:
patent: 5130266 (1992-07-01), Huang et al.
patent: 5451529 (1995-09-01), Hsu et al.
patent: 5576228 (1996-11-01), Chen et al.
patent: 5593923 (1997-01-01), Horiuchi et al.
patent: 5605854 (1997-02-01), Yoo
patent: 5750438 (1998-05-01), Hsue et al.

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