Method for forming a dual damascene contact and interconnect

Details Method for forming a dual damascene contact and interconnect Method for forming a dual damascene contact and interconnect

1998-06-03

2000-06-13

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438640, 438673, 438698, 438701, 438723, 438624, H01L 214763

Patent

active

060749423

ABSTRACT:
A method of forming a dual damascene structure including contacts and interconnects over a substrate is disclosed. The method comprises the steps of: forming an insulating layer on said substrate; forming a nitride layer over said insulating layer; forming a cap oxide layer over said nitride layer; patterning and etching said insulating layer, nitride layer, and cap oxide layer to correspond to the location of said contacts; patterning and etching said nitride layer and said cap oxide layer to correspond to the pattern of said interconnects; and performing a reflow step.

REFERENCES:
patent: 5453403 (1995-09-01), Meng et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5801094 (1998-09-01), Yew et al.

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