Method of making a fuse in a semiconductor device and a semicond

Details Method of making a fuse in a semiconductor device and a semicond Method of making a fuse in a semiconductor device and a semicond

1998-07-24

2000-06-13

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438281, 438631, 148DIG55, H01L 2144

Patent

active

060749407

ABSTRACT:
The present invention provides a fuse of a semiconductor device and a method of forming a fuse of a semiconductor device. The method of the invention includes forming an underlying metal conductor on a semiconductor substrate, forming an insulating film over the underlying metal conductor, and selectively etching regions of the insulating film. One of the regions of the insulating film is etched to form a via contact region exposing the underlying metal conductor. A second region is etched to form a groove in the insulating film for the fuse metal. Metal is buried within the second etched region of the insulating film and the via contact region to respectively form a fuse metal pattern and a via contact metal layer.

REFERENCES:
patent: 5316978 (1994-05-01), Boyd et al.
patent: 5447880 (1995-09-01), Lee et al.
patent: 5472901 (1995-12-01), Kapoor
patent: 5618750 (1997-04-01), Fukuhara et al.
patent: 5641701 (1997-06-01), Fukuhara et al.
patent: 5807786 (1998-09-01), Chang

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