Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1997-02-25

2000-06-13

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438302, 438525, 438592, H01L 2184

Patent

active

060749008

ABSTRACT:
In producing a top gate type or a bottom gate type thin film transistor (TFT), after a metal film for forming silicide is formed on a semiconductor active layer provided on an insulating surface, an N-type or P-type impurity ion is introduced into the semiconductor active layer using an anodizable gate electrode and an anodic oxide formed on the surface of the gate electrode as masks. The exposing portion of the semiconductor active layer is reacted with the metal film, so that a silicide layer is formed in the portion. Then, non-reacted portion of the metal film is removed.

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patent: 5545571 (1996-08-01), Yamazaki et al.
Wolf et al., "Silicon Processing for the VLSI Era Vol. 1: Process Technology", Lattice Press, pp. 292-294, 1986.

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