Semiconductor device with plated heat sink

Details Semiconductor device with plated heat sink Semiconductor device with plated heat sink

Filed on

1995-10-25

Date issued

1999-02-16

Examiner

Crane, Sara

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Housing or package

SubSubClass

With provision for cooling the housing or its contents

Other Related Categories

257713, 257620, H01L 2334

Type

Patent

Status

active

Patent number

058723960

Description

ABSTRACT:
A method of fabricating a semiconductor device includes forming a first chip separating in a wafer having a groove depth is less than the thickness of the wafer, forming a first metallization layer inside the first chip separating groove, thinning the wafer, forming a second chip separating groove in a region opposite the first chip separating groove at the rear surface of the wafer for separating the wafer into a plurality of semiconductor chips, forming a metallization layer inside the second chip separating groove, forming a PHS layer on the entire rear surface of the wafer, and cutting the wafer at the chip separating groove, thereby producing a semiconductor device. The burr produced when the wafer is cut does not protrude from the rear surface of the wafer, assuring good adhesion between the semiconductor chip and a chip carrier, realizing a semiconductor device of a good heat dispersion characteristic and, therefore, of high reliability.

REFERENCES:
patent: 5037782 (1991-08-01), Nakamura et al.
patent: 5275958 (1994-01-01), Ishikawa
patent: 5302554 (1994-04-01), Kashiwa et al.
patent: 5338967 (1994-08-01), Kosaki
patent: 5362678 (1994-11-01), Komaru et al.

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