Method of fabricating shallow trench isolation (STI)

Details Method of fabricating shallow trench isolation (STI) Method of fabricating shallow trench isolation (STI)

1999-07-01

2000-11-14

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438437, 438424, 148DIG50, H01L 2176

Patent

active

061469742

ABSTRACT:
A method of fabricating shallow trench isolation (STI) forms a trench in a substrate and a liner oxide layer in the trench. A first high density plasma chemical vapor deposition (HDPCVD) is performed to form a conformal oxide layer on the liner oxide layer, without applying bias to the substrate. A second HDPCVD is then performed to form an oxide layer that fills the trench and covers the conformal oxide layer on the conformal oxide layer.

REFERENCES:
patent: 5915190 (1999-06-01), Pirkle
patent: 5968610 (1999-10-01), Liu et al.
patent: 5989978 (1999-11-01), Peidous

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