Method for manufacturing semiconductor device using multiple ste

Details Method for manufacturing semiconductor device using multiple ste Method for manufacturing semiconductor device using multiple ste

1999-07-09

2000-11-14

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438909, 438149, 438150, 438166, 156643, H01L 2100

Patent

active

061469297

ABSTRACT:
In manufacturing a thin-film transistor on a glass substrate, a first thin film consisting of an amorphous silicon thin film is formed on the glass substrate, and a second thin film is formed on the first thin film. Then, this second thin film is etched to form a mask pattern. A dopant ion is doped into the first thin film through the mask pattern to form a source region and a drain region. The process of forming the mask pattern and the process of forming the source and drain regions are carried out continuously without exposing the substrate to the atmosphere.

REFERENCES:
patent: 4624737 (1986-11-01), Shimbo
patent: 5543356 (1996-08-01), Murakami et al.
patent: 5609737 (1997-03-01), Fukui et al.
patent: 5755938 (1998-05-01), Fukui et al.
patent: 5804471 (1998-09-01), Yamazaki et al.
patent: 5902704 (1999-05-01), Schoenborn et al.
patent: 6004831 (1999-12-01), Yamazaki et al.
patent: 6074917 (2000-06-01), Chang et al.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device using multiple ste does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device using multiple ste, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device using multiple ste will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2064205