Static information storage and retrieval – Read/write circuit – Testing
Patent
1998-04-29
2000-10-31
Hoang, Huan
Static information storage and retrieval
Read/write circuit
Testing
365149, 365205, G11C 700
Patent
active
061412708
ABSTRACT:
A cell margin test method for a dynamic cell plate sensing (DCPS) memory array. In a DCPS memory array, voltage moves on both a digitline and a cell plate line associated with an accessed memory cell. Voltage movement on the digitline and its associated cell plate line is in opposite directions, ie., voltage on one line moves up (goes high) and voltage on the other line moves down (goes low). Because voltage movement is in opposite directions, this produces a voltage swing which is larger than that produced by a conventional digitline pair approach, in which one digitline remains at a reference potential and the other digitline moves away from the reference potential. A method is provided for a DCPS memory array which tests sense amplifier latching with a voltage swing produced with one line (either a digitline or a cell plate line) held at a reference potential and another line (either a digitline or a cell plate line) moved away from the reference potential.
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Hoang Huan
Micro)n Technology, Inc.
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