Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-02
1998-04-21
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257360, 257647, H01L 2362
Patent
active
057420831
ABSTRACT:
A MOSFET structure for an ESD protection circuit in a semiconductor IC device having segmented diffusion regions. The transistor includes a gate having an extended strip-shaped structure formed on the substrate of the IC device. A well region is formed in the substrate on a first side of the gate structure. A first drain diffusion region is formed in the well region, and a second drain diffusion region is formed partially inside the well region. A source diffusion region is formed in the substrate along a second side of the gate structure, opposing the first side. A field oxide layer is formed over the surface of the substrate, the field oxide layer comprises a number of finger-shaped extensions originating from the drain side of the transistor and extending into the source side of the transistor. The finger-shaped extensions divide the second drain diffusion region into a number of parallel-aligned segmented diffusion regions.
REFERENCES:
patent: 4962410 (1990-10-01), Kriman et al.
patent: 5105243 (1992-04-01), Nakagawa et al.
patent: 5157573 (1992-10-01), Lee et al.
Hardy David B.
Thomas Tom
Winbond Electronics Corporation
LandOfFree
Electrostatic discharge protection metal-oxide semiconductor fie does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrostatic discharge protection metal-oxide semiconductor fie, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatic discharge protection metal-oxide semiconductor fie will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2060475