Self-aligned contact through a conducting layer

Details Self-aligned contact through a conducting layer Self-aligned contact through a conducting layer

1995-01-03

2000-10-31

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257758, 257773, H01L 2348

Patent

active

061407054

ABSTRACT:
A contact hole (32) is formed through a conducting layer (28). The conducting layer (28) is then undercut (34 and 36). An insulating layer (40) is formed in the contact hole (32). A contact (42) is then formed within the contact hole (32).

REFERENCES:
patent: 4985718 (1991-01-01), Ishijima
patent: 5126810 (1992-06-01), Gotou
patent: 5204286 (1993-04-01), Doan
patent: 5262352 (1993-11-01), Woo et al.
patent: 5500544 (1996-03-01), Park et al.

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