Mask for recovering alignment marks after chemical mechanical po

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430 22, G03F 900

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active

059686871

ABSTRACT:
A mask pattern and method are described for the recovery of alignment marks on an integrated circuit wafer without the use of additional masks. The mask pattern and method provide means to recover the alignment marks after forming a metal layer on a planarized inter-level dielectric layer. The pattern which conventional methods have placed on a separate mask is formed in the end regions of a mask used for forming a pattern on the active region of the wafer. In order to fit the pattern in the end regions of the mask the pattern is divided into two parts. When the pattern is used to expose a layer of photoresist two exposure steps are used.

REFERENCES:
patent: 5456756 (1995-10-01), Ramaswami et al.
patent: 5503962 (1996-04-01), Caldwell
patent: 5843600 (1998-12-01), Chu et al.
patent: 5858588 (1999-01-01), Chang et al.

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