Semiconductor device having four power MOSFETs constituting H br

Details Semiconductor device having four power MOSFETs constituting H br Semiconductor device having four power MOSFETs constituting H br

1995-10-31

1997-12-30

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, 257401, H01L 2976, H01L 2994, H01L 31062

Patent

active

057033900

ABSTRACT:
A semiconductor device including first, second, third and fourth MOSFETs constituting an H bridge circuit. Each of the first and second MOSFETs is a vertical DMOSFET and each of the third and fourth MOSFETs is a lateral DMOSFET having a surface diffusion region formed in a portion of a drain region. The surface diffusion region has a conductivity type opposite that of a source region of the lateral DMOSFET and is electrically connected to the source region. Each of the surface diffusion regions may be made of a part of a channel stop region formed under a field insulator film. Each of the third and fourth MOSFETs may be a lateral DMOSFET having no surface diffusion region. Low on-resistance and small chip size of the device are obtained.

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