Chemically removable Cu CMP slurry abrasive

Details Chemically removable Cu CMP slurry abrasive Chemically removable Cu CMP slurry abrasive

1998-11-25

2000-10-31

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, 438694, 438697, 438745, 438754, H01L 21304

Patent

active

061402397

ABSTRACT:
Abrasion of Cu metallization during CMP is reduced and residual slurry particulate removal facilitated by employing a CMP slurry containing a dispersion of iron oxide particles having high solubility in dilute acids. Embodiments include CMP Cu metallization with a slurry containing iron oxide particles and removing residual iron oxide particles after CMP with an organic acid, such as oxalic acid or acetic acid, or a dilute inorganic acid, such as hydrochloric, boric or fluoroboric acid.

REFERENCES:
patent: 4954142 (1990-09-01), Carr et al.
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 5389194 (1995-02-01), Rostoker et al.
patent: 5575837 (1996-11-01), Kodama et al.
patent: 5645628 (1997-07-01), Endo et al.
patent: 5662769 (1997-09-01), Schonauer et al.
patent: 5664989 (1997-09-01), Nakata et al.
patent: 5677244 (1997-10-01), Venkatraman
patent: 5693563 (1997-12-01), Teong
patent: 5733819 (1998-03-01), Komada
patent: 5770095 (1998-06-01), Sasaki et al.
patent: 5840629 (1998-11-01), Carpio
patent: 5858813 (1999-01-01), Scherber et al.

Affiliated with

Also associated with

Rating

Chemically removable Cu CMP slurry abrasive does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemically removable Cu CMP slurry abrasive, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemically removable Cu CMP slurry abrasive will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2051205