Method for forming vias through porous dielectric material and d

Details Method for forming vias through porous dielectric material and d Method for forming vias through porous dielectric material and d

1998-07-29

2000-10-31

Elms, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438763, 437195, 437238, 437763, H01L 214763

Patent

active

061402214

ABSTRACT:
A semiconductor device has a device layer, a conductive structure, such as a conductive line, disposed over the device layer, and a porous dielectric layer disposed over the device layer and the conductive structure. At least one via is formed through the porous dielectric layer to the conductive structure with a second dielectric material formed along sidewalls of the via. Often, the porous dielectric layer includes a hydrophobic aerogel material having silicon-hydrogen bonds. One exemplary method of making the semiconductor device includes forming a conductive structure over a device layer of the semiconductor device and then forming a porous dielectric layer over the device layer and the conductive structure. A first via is formed through the porous dielectric layer to the conductive structure. The first via is filled with a second dielectric material that is less porous than the porous dielectric layer and then a second via is formed through the second dielectric material to the conductive structure.

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