Methods and apparatus for passivating a substrate in a plasma re

Coating apparatus – Gas or vapor deposition – With treating means

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118504, 156345, 438731, C23C 1600

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active

059682752

ABSTRACT:
A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H.sub.2 O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.

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"Notification of Transmittal of the International Search Report," Oct. 26, 1998, European Patent Office.
"International Search Report," Oct. 26, 1998, European Patent Office.

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