Method of forming retrograde well in bonded waffers

Details Method of forming retrograde well in bonded waffers Method of forming retrograde well in bonded waffers

1997-04-23

2000-10-31

Wilczewski, Mary

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438459, 438479, 438517, 438977, 438154, 438311, H01L 2130

Patent

active

061402052

ABSTRACT:
A method of forming a semiconductor substrate, comprising the steps of: providing a device substrate of a first conductivity type having a first surface and a second surface, and a handle substrate; depositing a dopant in the first surface of the wafer; diffusing the dopant through the wafer from the first surface toward the second surface, thereby forming a well; bonding the first surface of the device wafer to the handle substrate; and thinning the device substrate to yield a final device layer with a retrograde well. The dopant may be of the first or a second conductivity type.

REFERENCES:
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patent: 4968628 (1990-11-01), Delgado et al.
patent: 5004705 (1991-04-01), Blackstone
patent: 5466303 (1995-11-01), Yamaguchi et al.
patent: 5514235 (1996-05-01), Mitani et al.
patent: 5538904 (1996-07-01), Mitani et al.

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