Semiconductor device

Details Semiconductor device Semiconductor device

1998-02-19

1998-12-22

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, H01L 2976, H01L 2362

Patent

active

058523189

ABSTRACT:
A semiconductor device includes: a plurality of first field effect transistors (FETs) having a gate formed on a main surface of a semiconductor substrate, and a drain and a source formed in regions on both sides of the gate; a plurality of second FETs having a gate formed on the main surface of the semiconductor substrate, and a drain and a source formed in regions on both sides of the gate; and an electrically conductive layer that penetrates the main surface and a back surface of the semiconductor substrate in a region between the pair of FETs; wherein the first and second FETs that form the pair of FETs are disposed close to each other so that their drains are opposite to each other; wherein region widths of the first and second FETs in a direction of shorter sides of sources thereof are substantially identical with region widths of the first and second FETs in a direction of shorter sides of drains thereof; wherein all the drains of the first and second FETs are electrically connected to each other; wherein all the gates of the first and second FETs are electrically connected to each other; and wherein all the sources of the first and second FETs are electrically connected to each other on the back surface of the semiconductor substrate through the conductive layer.

REFERENCES:
patent: 5449939 (1995-09-01), Horiguchi et al.
patent: 5652452 (1997-07-01), Asano
patent: 5703744 (1997-12-01), Jinda
patent: 5731614 (1998-03-01), Ham
Alan Wood et al., "High Performance Silicon LDMOS Technology For 2GHzRF Power Amplifier Applications", IEEE 1996, pp 4.2.1-4.2.4.
Gordon MA et al., "High Efficiency Submicron Gate LDMOS Power FET For Low Voltage Wireless Communications", IEEE 1997, pp 1303-1306.
Osamu Ishikawa et al., "A High-Power High-Gain VD-MOSFET Operating at 900 MHz", IEEE Transactions on Electron Devices, vol. ED-34, No. 5, May 1987, pp 1157-1161.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2050479