Integrated infrared detection system

Details Integrated infrared detection system Integrated infrared detection system

1999-04-13

2000-10-31

Clark, Sheila V.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 66, 438 69, 438 70, 438 93, 438 95, 257188, 257191, H01L 2100

Patent

active

061401455

ABSTRACT:
This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top surface of the circuit; c) an epitaxial insulating layer (e.g. CdTe 102) on the lattice-match layer; and d) at least two epitaxial HgCdTe sensors 101,121 on the insulating layer, with the HgCdTe sensors being electrically connected to the circuitry. Preferably, the circuitry is silicon. Preferably, an IR transparent, spacer layer (e.g. CdTe 120 or CdZnTe) is on the HgCdTe sensors and an HgCdTe filter 122 is on the spacer layer. Preferably, at least one of the HgCdTe sensors and the HgCdTe filter is laterally continuously graded.

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