Semiconductor device having reduced overlap capacitance and meth

Details Semiconductor device having reduced overlap capacitance and meth Semiconductor device having reduced overlap capacitance and meth

1998-06-24

2000-07-18

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257364, 257401, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

060911182

ABSTRACT:
A semiconductor device and process for manufacture thereof is disclosed in which a gate electrode with reduced overlap capacitance is formed by forming a gate electrode on a surface of a semiconductor and doping edge portions of the gate electrode with a first doping which effectively reduces the conductivity of the edge portions of the gate electrode. The conductivity of the gate electrode may be reduced at the edge portions by doping the edge portions with a dopant which inhibits the doping of the gate electrode or with a dopant which has a different conductivity type than the gate electrode dopant.

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