Semiconductor device with evaluation MISFET

Details Semiconductor device with evaluation MISFET Semiconductor device with evaluation MISFET

1999-03-16

2000-07-18

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257348, H01L 2978, H01L 2986

Patent

active

060911131

ABSTRACT:
A depletion type MISFET is formed on a surface of the semiconductor substrate, MISFET including a source region, a drain region, a channel region between the source and drain regions, a gate insulating film on the channel region, and a gate electrode on the gate insulating film. An impurity diffusion region is formed in a surface layer of the semiconductor substrate. An interconnect electrically connects the gate electrode and impurity diffusion region. A p-n junction is reversed biased when a voltage sufficient for cutting off the MISFET is applied to the gate electrode relative to the channel region, an electric path between the impurity diffusion region and the channel region is made non-conductive. Pads are connected to the gate electrode, source region, and drain region.

REFERENCES:
patent: 3999212 (1976-12-01), Usuda
patent: 4051504 (1977-09-01), Hile
patent: 5550701 (1996-08-01), Nadd et al.
patent: 5612566 (1997-03-01), Williams

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