Silicon on insulator semiconductor substrate and fabrication met

Details Silicon on insulator semiconductor substrate and fabrication met Silicon on insulator semiconductor substrate and fabrication met

1997-12-16

2000-07-18

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 438455, 438459, H01L 2701, H01L 2712

Patent

active

060911123

ABSTRACT:
An SOI semiconductor substrate and a fabrication method therefor which are capable of preventing a depletion region due to a fixed electric charge occurring at a junction surface from being formed in a silicon wafer within which an integrated circuit is to be formed. The SOI semiconductor substrate includes a first silicon wafer, a first oxide layer formed on an upper surface of the first silicon wafer, an undoped polysilicon layer formed on an upper surface of the first oxide layer, and a second silicon wafer formed on an upper surface of the polysilicon layer.

REFERENCES:
patent: 5308776 (1994-05-01), Gotou
patent: 5773152 (1998-06-01), Okonogi
patent: 5773352 (1998-06-01), Hamajima
patent: 5786615 (1998-07-01), Saito

Affiliated with

Also associated with

Rating

Silicon on insulator semiconductor substrate and fabrication met does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon on insulator semiconductor substrate and fabrication met, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon on insulator semiconductor substrate and fabrication met will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2039343