Semiconductor device having different gate oxide thicknesses by

Details Semiconductor device having different gate oxide thicknesses by Semiconductor device having different gate oxide thicknesses by

1999-05-11

2000-07-18

Bowers, Charles

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

438275, 438981, H01L 2976

Patent

active

060911093

ABSTRACT:
The present invention provides a structure comprising: a first oxide film having a first thickness and extending on a first region of a semiconductor substrate; and a second oxide film having a second thickness which is thicker than the first thickness of the first oxide film, the second oxide film extending on a second region of the semiconductor substrate, wherein the first oxide film contains a first substance which is capable of decreasing an oxidation rate of a thermal oxidation process, while the second oxide film contains a second substance which is capable of increasing the oxidation rate of the thermal oxidation process.

REFERENCES:
patent: 5254489 (1993-10-01), Nakata
patent: 5480828 (1996-01-01), Hsu et al.

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