Method of forming a conductive silicide layer on a silicon compr

Details Method of forming a conductive silicide layer on a silicon compr Method of forming a conductive silicide layer on a silicon compr

1999-09-02

2000-07-18

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438787, 438630, H01L 2144

Patent

active

06090707&

ABSTRACT:
The invention includes methods of forming a conductive silicide layers on silicon comprising substrates, and methods of forming conductive silicide contacts. In one implementation, a method of forming a conductive silicide layer on a silicon comprising substrate includes reacting oxygen with silicon of a silicon comprising substrate to form oxides of silicon from silicon of the substrate. The oxides of silicon include stoichiometric silicon dioxide and substoichiometric silicon dioxide. The stoichiometric silicon dioxide and substoichiometric silicon dioxide are exposed to ozone to transform at least some of the substoichiometric silicon dioxide to stoichiometric silicon dioxide. After the exposing, a conductive metal silicide is formed in electrical connection with silicon of the silicon comprising substrate. In one implementation, a method of forming a conductive silicide layer on a silicon comprising substrate includes reacting oxygen with silicon of a silicon comprising substrate to form oxides of silicon from silicon of the substrate. The oxides of silicon include stoichiometric silicon dioxide and substoichiometric silicon dioxide. The stoichiometric silicon dioxide and substoichiometric silicon dioxide are exposed to O.sub.2 plasma to transform at least some of the substoichiometric silicon dioxide to stoichiometric silicon dioxide. After the exposing, a metal is reacted with silicon of the substrate to form a conductive metal silicide.

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