Method to improve the adhesion of a molding compound to a semico

Details Method to improve the adhesion of a molding compound to a semico Method to improve the adhesion of a molding compound to a semico

1999-10-20

2000-07-18

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438638, 438666, 438668, 438687, H01L 2144

Patent

active

060906960

ABSTRACT:
A process used to create a non-smooth, top surface topography, for a semiconductor substrate, needed to improve the adhesion between a protective molding compound, and the underlying top surface of the semiconductor substrate, has been developed. The process features the creation of the non-smooth, top surface topography, including either: recessed, or etched back, copper damascene structures, in an insulator layer; or copper damascene structures, in a recessed, or etched back, insulator layer. The recessing of the copper damascene structures, or of the insulator layer, is accomplished via selective, dry or wet etch procedures. After formation of a gold wire bond, on the top surface of a copper damascene structure, a protective molding compound is applied, to the underlying, non-smooth, top surface topography.

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