Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Patent
1998-07-29
2000-07-18
Niebling, John F.
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
438456, 438650, H01L 2130
Patent
active
060906871
ABSTRACT:
A palladium contact and a gasket are formed on a first wafer. The gasket and contact are simultaneously engaged with a silicon layer of a second wafer. The wafers are then heated to a temperature that both forms a bond between the palladium contact of the first wafer with the silicon layer of the second wafer and that fuses the gasket to the second wafer. Therefore, when the temperature is decreased, the palladium-silicon bond maintains the alignment of the two wafers with respect to one another, and the gasket hardens to form seal around a periphery of the two wafers. By placing the two wafers in a vacuum environment prior to engaging the two wafers, the space encompassed by the gasket and the two wafers forms a sealed vacuum during the heating process. Therefore, the heating process not only forms a palladium-silicon bond between the two wafers, but it also forms a vacuum seal around selected components included within either of the two wafers.
REFERENCES:
patent: 4769272 (1988-09-01), Byrne et al.
patent: 5262347 (1993-11-01), Sands
patent: 5835142 (1998-11-01), Nakamura et al.
Hoen Storrs
Merchant Paul P.
Agilent Technolgies, Inc.
Lattin Christopher
Niebling John F.
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