Non-inverting non-volatile dynamic RAM cell

Details Non-inverting non-volatile dynamic RAM cell Non-inverting non-volatile dynamic RAM cell

1981-12-31

1984-05-01

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Capacitors

365182, 365185, G11C 1124, G11C 1134

Patent

active

044465351

ABSTRACT:
This invention provides improved non-volatile semiconductor memories which form non-inverting signals and which include a one device dynamic volatile memory circuit having a storage capacitor which includes a conductive plate, a charged floating gate and an inversion layer in a semiconductor substrate together with a non-volatile device including the floating gate, a control electrode and a voltage divider having first and second serially-connected capacitors, with the floating gate being disposed at the common point between the first and second capacitors. The plate of the storage capacitor is connected to a reference voltage source. The control electrode is capacitively coupled to the floating gate through the first capacitor which includes a charge or electron injector structure. The capacitance of the first capacitor has a value, preferably, substantially less than that of the second capacitor which is formed between the floating gate and the semiconductor substrate.

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DiMaria et al., "High Current Injection into SiO.sub.2 from Si Rich SiO.sub.2 Films and Experimental Applications", Journal Applied Physics 51(5), May 1980, pp. 2722-2735.
DiMaria et al., "Electrically Alterable Memory Using a Dual Electron Injector Structure", IEEE Electron Device Letters, vol. EDL 1, No. 9, Sep. 1980, pp. 179-181.

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