Ferroelectric space charge capacitor memory system

Details Ferroelectric space charge capacitor memory system Ferroelectric space charge capacitor memory system

1991-11-15

1993-09-14

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518901, G11C 1122

Patent

active

052455688

ABSTRACT:
A ferroelectric space charge capacitor memory system includes a ferroelectric space charge capacitor memory cell having two ferroelectric space charge capacitor memory devices; a write circuit for applying coercive write voltage to each of the memory devices to establish internal polarization fields and space charge regions of opposite polarity in each device, respectively; a bias voltage circuit for applying to each of the devices a bias voltage less than the coercive voltage at a rate slower than the rate of space charge formation to define a capacitive level representative of one of the polarization states; a read signal circuit for introducing to each of the devices a read signal at a rate faster than the rate of space charge formation, which together with the bias voltage is less than the coercive voltage; and a detector responsive to the read signal for indicating the difference in charge transferred by each memory device representing the logical state of the memory cell.

REFERENCES:
patent: 5140548 (1992-08-01), Brennan
patent: 5151877 (1992-09-01), Brennan

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