Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1991-09-19
1993-09-14
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429809, 20429812, C23C 1434
Patent
active
052445569
ABSTRACT:
There is disclosed a method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under predetermined ambient conditions in the chamber. The method includes the steps of: mounting a target, which is formed of a backing plate and a target plate directly connected to the backing plate, on the cathode assembly, the backing plate having a heat conductivity greater than that of the target plate; heating the target at a predetermined temperature at which residual gases absorbed on the target plate are removed therefrom; and activating the cathode assembly so that the target plate is sputtered. The target can also be formed of a backing plate, a spacer directly connected to the backing plate, and a target plate directly connected to the spacer, the spacer having a melting point greater than that of the target plate.
REFERENCES:
patent: 4049523 (1977-09-01), Boehnke et al.
patent: 4324631 (1982-04-01), Meckel et al.
Patent Abstracts of Japan, vol. 12, No. 263 (C-514)(3110) 22 Jul. 1988 & JP-A-63 045368 (Toshiba Corp) 26 Feb. 1988.
Patent Abstracts of Japan, vol. 13, No. 84 (C-572)(3432) 27 Feb. 1989 & JP-A-63 270459 (Matsushita Electric Ind Ltd) 8 Nov. 1988.
Patent Abstracts of Japan, vol. 13, No. 384 (C-629)(3732) 24 Aug. 1989 & JP-A-1 132760 (Matsushita Electric Ind Ltd) 25 May 1989.
Patent Abstracts of Japan, vol. 14, No. 431 (C-759)(4374) 17 Sep. 1990 & JP-A-2 166274 (Misubishi Electric Corp) 26 Jun. 1990.
Fujitsu Limited
Weisstuch Aaron
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