Method of restoring semiconductor device performance

Details Method of restoring semiconductor device performance Method of restoring semiconductor device performance

1981-02-27

1982-07-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156656, 204192E, C23F 100, B44C 122, C03C 1500, C03C 2506

Patent

active

043415946

ABSTRACT:
Contaminant metal residue on an organic passivation layer of a semiconductor device is removed by plasma etching thereof whereby the performance of the device is restored.

REFERENCES:
patent: 3806365 (1974-04-01), Jacob
patent: 4062720 (1977-12-01), Alcorn et al.
patent: 4180432 (1979-12-01), Clark
IBM Technical Disclosure Bulletin, vol. 21, No. 6, Nov. 1978, Plasma Removal of Residue Following Reactive Ion Etching of Aluminum and Aluminum Alloys by G. T. Chiu et al., p. 2315.
A. T. Bell, "An Introduction to Plasma Processing", Solid State Technology, Apr., 1978, pp. 89-94.

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