Reflecting photo mask for x-ray exposure and method for manufact

Details Reflecting photo mask for x-ray exposure and method for manufact Reflecting photo mask for x-ray exposure and method for manufact

1995-05-15

1996-11-05

Church, Craig E.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 34, 430 5, G21K 500

Patent

active

055725643

ABSTRACT:
Reflection-type mask for X-ray exposure generating a high contrast of the edge part of a mask pattern and capable of transferring the mask pattern in an accurate and clear manner. The mask, is provided with a substrate composed of a material that does not reflect X-ray radiation and an X-ray reflectable multilayer patterned on the substrate. The substrate is formed such that at least a part of the edge faces of the pattern comprising the multilayer is formed as substantial slant face parallel to the direction of the exit direction of the parallel X-ray beam incident into the multilayer after the reflection thereof on a plurality of the interfaces between the layers within the multilayer. The mask can be manufactured by irradiating an ion beam from a slant direction onto the multilayer on which is formed a resist pattern thereby effecting the etching.

REFERENCES:
patent: 4891830 (1990-01-01), Iwahashi
patent: 5052033 (1991-09-01), Ikeda et al.

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