Semiconductor integrated circuit device with self-aligned superh

Details Semiconductor integrated circuit device with self-aligned superh Semiconductor integrated circuit device with self-aligned superh

1995-02-06

1996-04-02

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257554, 257575, H01L 2900, H01L 27082, H01L 27102

Patent

active

055043682

ABSTRACT:
A superhigh speed vertical transistor having an ultra thin base, a vertical NPN transistor having a reverse direction structure for composing an IIL, and a lateral PNP transistor similarly composing an injector of an IIL are integrated on a P-type silicon substrate. The emitter leading-out part opening of the superhigh speed vertical NPN transistor and the collector leading-out part opening of the vertical NPN transistor having a reverse direction structure are self-aligned to the base leading-out electrode. Since both the superhigh speed vertical NPN transistor having a reverse direction structure and the superhigh speed vertical NPN transistor are self-aligned, the superhigh speed vertical NPN transistor and the IIL device may be integrated on the same chip. In addition, the intrinsic base layer of the vertical NPN transistor having a reverse direction structure is deeper in junction than the base layer of the polysilicon emitter electrode for the superhigh speed NPN transistor of self-aligned type.

REFERENCES:
patent: 3912555 (1975-10-01), Tsuyuki
patent: 4826780 (1989-05-01), Takemoto et al.
patent: 5014107 (1991-05-01), Vora
patent: 5072287 (1991-12-01), Nakagawa et al.
patent: 5162252 (1992-11-01), Kanda et al.

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