Semiconductor device

Details Semiconductor device Semiconductor device

1992-09-02

1996-04-02

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257557, 257588, 257371, H01L 2976, H01L 27082, H01L 2900

Patent

active

055043631

ABSTRACT:
Vertically stacked regions of n-type and p-type conductivity are formed around bipolar and field effect transistors to reduce parasitic capacitance between the semiconductor device and surrounding well regions. Under reverse bias a portion of the vertically stacked region is fully depleted and thus reduces the parasitic capacitance between the semiconductor device and the well region.

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