Non-volatile memory and method of manufacturing the same

Details Non-volatile memory and method of manufacturing the same Non-volatile memory and method of manufacturing the same

1992-06-09

1993-12-07

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257333, 257390, 437 29, 437 40, 437 41, 437 48, 437 52, 437 63, H01L 2968, H01L 21265

Patent

active

052685853

ABSTRACT:
A non-volatile memory comprises an auxiliary gate of polysilicon provided on a Si substrate having a gate insulating film and a field oxidation film; a floating gate which is provided on a side wall of the auxiliary gate lying in an active region with a small piece of a first insulating film interposed between them and which is formed by etchback of useless part of a polysilicon side wall spacer; and a control gate of polysilicon provided at least on the floating gate including a second insulating film interposed between them; the floating gate being formed in self-alignment to the control gate.

REFERENCES:
patent: 4882707 (1989-11-01), Mizutani
patent: 5051793 (1991-09-01), Wang

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