High density ROM

Details High density ROM High density ROM

1994-12-29

1996-11-05

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257390, 257382, H01L 2976

Patent

active

055720560

ABSTRACT:
A ROM is formed by depositing a first layer composed of a material selected from polysilicon and polycide on the substrate, patterning the first layer by masking and etching, depositing a dielectric layer over the first layer and patterning the dielectric layer and the first layer into the pattern of first conductor lines, forming a contact window through the dielectric layer down to the substrate, depositing a second layer composed of a material selected from polysilicon and polycide on the device and forming second conductor lines directed orthogonally to the first conductor lines formed from the first layer, and ion implanting into the substrate through the second layer to form a contact region electrically connected to the second conductor lines of the second layer.

REFERENCES:
patent: 4597060 (1986-06-01), Mitchell et al.
patent: 4707718 (1987-11-01), Sakai et al.
patent: 4833514 (1989-05-01), Esquivel et al.
patent: 4898840 (1990-02-01), Okuyama
patent: 4904615 (1990-02-01), Okuyama et al.
patent: 5027175 (1991-06-01), Iwasa
patent: 5087584 (1992-02-01), Wada et al.
patent: 5101262 (1992-03-01), Ariisumi et al.
patent: 5149664 (1992-09-01), Shin et al.
patent: 5323048 (1994-06-01), Onuma
patent: 5416349 (1995-05-01), Bergemont

Affiliated with

Also associated with

Rating

High density ROM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density ROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density ROM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2016670