Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-09-14
1995-11-28
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257370, 257577, 257592, H01L 2702
Patent
active
054710820
ABSTRACT:
A semiconductor device having an electrostatic discharge protection device, in which the electrostatic discharge protection device comprises a vertical type bipolar transistor including, a semiconductor substrate, an epitaxial layer laminated on the semiconductor substrate, a buried collector of a first conductive type which is formed of the semiconductor substrate or which is formed from the surface of the semiconductor substrate to the epitaxial layer, a base of a second conductive type which is a lightly doped well and formed on the epitaxial layer, and an emitter of the first conductive type and formed on the surface layer of the base of the second conductive type; and in which the depth of the diffusion of the base being in the range from 0.8 to 2.3 microns, and the base and the emitter being shorted with each other.
Prenty Mark V.
Sharp Kabushiki Kaisha
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