1990-04-06
1992-03-24
James, Andrew J.
357 4, 357 231, 357 237, 357 59, 357 16, H01L 2712, H01L 4500, H01L, H01L 2900
Patent
active
050992961
ABSTRACT:
A thin film transistor in which a source electrode is electrically isolated from a drain electrode and a gate electrode. The gate electrode is formed on one surface of an electrically insulating layer. A semiconducting layer is formed on the other surface of the electrically insulating layer. The semiconducting layer has a charge carrier mobility of at least 1 cm.sup.2 /V-sec. and is made from a polycrystalline diamond layer. The source electrode and the drain electrode are formed on one surface of the polycrystalline diamond layer. The other surface of the polycrystalline diamond layer is in integral contact with the other surface of the electrically insulating layer.
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Article in IEEE Electron Device Letters, vol. ED-8, No. 8, Aug. 87 by M. W. Geiss et al. titled "High-Temperature . . . Diamond".
Article in Japanese Journal of Applied Physics, vol. 28, No. 12, Dec. 89 by H. Shiomi et al., titled "Field-Effect Transistors . . . Film".
Article in Japanese Journal of Applied Physics, vol. 25, No. 10, L808, Oct. 86 by A. Ono et al. titled "Thermal Conductivity of Diamond . . . CVD".
Jansen Frank
Machonkin Mary A.
Mort Joseph
Okumura Koji
Basch Duane C.
James Andrew J.
Jr. Carl Whitehead
Xerox Corporation
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