Semiconductor substrate including strained layer superlattice st

Details Semiconductor substrate including strained layer superlattice st Semiconductor substrate including strained layer superlattice st

1989-02-28

1991-03-19

James, Andrew J.

357 16, 357 88, 357 90, H01L 2712, H01L 4500, H01L 4902, H01L 2961

Patent

active

050015214

ABSTRACT:
A semiconductor substrate comprising: a single-crystalline semiconductor wafer substrate; a strained layer superlattice (SLS) structure layer formed on the wafer substrate; and a compound semiconductor epitaxial layer formed on the SLS structure layer. According to the present invention, the SLS structure layer consists of pairs of a first compound semiconductor thin layer and a second compound semiconductor thin layer, the first and second thin layers having the same components in a compound system having a miscibility gap, and having different compositions outside of the miscibility gap including the limit line of the miscibility gap, respectively, at a temperature higher than that of heat-treatments applied to the compound semiconductor substrate, without a decay of the SLS structure.

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