Method of removing native oxide film from a contact hole on sili

Details Method of removing native oxide film from a contact hole on sili Method of removing native oxide film from a contact hole on sili

1992-08-13

1996-11-05

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566531, 1566571, 156345, 134 3, 134 31, 252 791, 252 793, 252 794, B44C 122, C03C 1500, C03C 2506

Patent

active

055713750

ABSTRACT:
A method of removing a native oxide film on a main surface of a silicon wafer. The native oxide film is formed in a contact hole of a patterned BPSG film or PSG film formed on the main surface. The method includes the steps of: placing a silicon wafer in a reaction chamber hermetically separated from outside atmosphere, and supplying mixed vapor of hydrogen fluoride and substantially high concentration alcohol to the reaction chamber. The step of supplying the mixed vapor of hydrogen fluoride and substantially high concentration alcohol preferably includes the steps of generating vapor from an azeotropic concentration mixture of hydrogen fluoride and alcohol, generating vapor of high purity alcohol solution and mixing these vapors. The vapor of hydrogen fluoride easily enters a small opening, which enables etching of the native oxide film. Since substantially high concentration alcohol exists in the reaction atmosphere, moisture the like by-product of etching is removed by the alcohol. Therefore, there is no possibility of excessively promoting etching of the BPSG film, etc. An alcohol layer is formed on the main surface after the etching, which prevents formation of a native oxide film on the main surface.

REFERENCES:
patent: 5022961 (1991-06-01), Izumi et al.
patent: 5100495 (1992-03-01), Ohmi et al.
patent: 5112437 (1992-05-01), Watanabe et al.
Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, pp. 532-534.
"Control of Native Silicon Oxide Growth" Morita et al., Faculty of Engineering, Tohoku University pp. 11-12 (with English translation).

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