Dielectric thin film and method of manufacturing same

Details Dielectric thin film and method of manufacturing same Dielectric thin film and method of manufacturing same

1991-09-23

1995-11-28

Kunemund, Robert

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

252 623BT, 437235, 437236, H01L 21312

Patent

active

054703980

ABSTRACT:
A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O.sub.2, N.sub.2 O, and a mixture of O.sub.2 and N.sub.2 O by plasma-decomposing the raw materials with the application of a strong electric field.

REFERENCES:
patent: 4310567 (1982-01-01), Tabata et al.
patent: 4486096 (1984-12-01), Endo et al.
patent: 4665608 (1987-05-01), Okamoto et al.
patent: 4731560 (1988-03-01), Ernsthausen
S. Wolf and R. N. Tauber, "Oxidation of Silicides", Silicon Processing for the VLSI Era, vol. 1-Process Technology, at pp. 395-397 (1986).

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